Characterization In-Situ of Diode Detectors for Six-Port receivers

Barbon F, Lindner S, Mann S, Linz S, Weigel R, Kölpin A (2013)

Publication Type: Conference contribution

Publication year: 2013

Publisher: GMM, ITG

Event location: Bad Staffelstein

Abstract

Six-Port receivers require a precise power mea- surement thus a characterization in-situ of its power detector is necessary. The industrial working ambient requires a constant performance monitoring due to temperature drift, fabrication and component tolerances. The detectors’ performance may have some degradation, which limits the measurement accuracy. Thus, an in-situ detector characterization is necessary. In this paper, a fast and simple solution for estimating the diode detectors’ char- acteristics is presented, which is ideal for Six-Port diode power detectors. This method is fast and can be easily implemented on a microcontroller.

Authors with CRIS profile

Francesco Barbon Lehrstuhl für Technische Elektronik Stefan Lindner Lehrstuhl für Technische Elektronik Sebastian Mann Lehrstuhl für Technische Elektronik Sarah Linz Lehrstuhl für Technische Elektronik Robert Weigel Lehrstuhl für Technische Elektronik Alexander Kölpin Lehrstuhl für Technische Elektronik

How to cite

APA:

Barbon, F., Lindner, S., Mann, S., Linz, S., Weigel, R., & Kölpin, A. (2013). Characterization In-Situ of Diode Detectors for Six-Port receivers. In Proceedings of the Testmethoden und Zuverlässigkeit von Schaltungen und Systemen (TuZ). Bad Staffelstein: GMM, ITG.

MLA:

Barbon, Francesco, et al. "Characterization In-Situ of Diode Detectors for Six-Port receivers." Proceedings of the Testmethoden und Zuverlässigkeit von Schaltungen und Systemen (TuZ), Bad Staffelstein GMM, ITG, 2013.

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