Hirschmann J, Faber H, Halik M (2012)
Publication Language: English
Publication Type: Journal article, Report
Publication year: 2012
Book Volume: 4
Pages Range: 444-447
URI: http://pubs.rsc.org/en/content/articlelanding/2012/nr/c2nr11589a#!divAbstract
DOI: 10.1039/C2NR11589A
APA:
Hirschmann, J., Faber, H., & Halik, M. (2012). Concept of a thin film memory transistor based on ZnO nanoparticles insulated by a ligand shell. Nanoscale, 4, 444-447. https://doi.org/10.1039/C2NR11589A
MLA:
Hirschmann, Johannes, Hendrik Faber, and Marcus Halik. "Concept of a thin film memory transistor based on ZnO nanoparticles insulated by a ligand shell." Nanoscale 4 (2012): 444-447.
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