Toumi, S. S, Ouennoughi Z, Strenger C, Frey L (2016)
Publication Status: Published
Publication Type: Journal article
Publication year: 2016
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Book Volume: 122
Pages Range: 56-63
DOI: 10.1016/j.sse.2016.04.007
Current conduction mechanisms through a Metal-Oxide-Semiconductor structure are characterized via Fowler-Nordheim (FN) plots. The extraction of the FN parameters like the electron/hole effective mass in oxide m(ox) and in semiconductor m(sc), the barrier height at the semiconductor-oxide interface phi(B), and the correction oxide voltage V-corr for a MOS structure is made using a vertical optimization process on the current density without any assumption about phi(B) or m(ox). An excellent agreement is obtained between the FN plots calculated with the FN parameters extracted using a vertical optimization process with the experimental one. (C) 2016 Elsevier Ltd. All rights reserved.
APA:
Toumi, S., S., Ouennoughi, Z., Strenger, C., & Frey, L. (2016). Determination of Fowler-Nordheim tunneling parameters in Metal-Oxide-Semiconductor structure including oxide field correction using a vertical optimization method. Solid-State Electronics, 122, 56-63. https://doi.org/10.1016/j.sse.2016.04.007
MLA:
Toumi, S., S., et al. "Determination of Fowler-Nordheim tunneling parameters in Metal-Oxide-Semiconductor structure including oxide field correction using a vertical optimization method." Solid-State Electronics 122 (2016): 56-63.
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