Müller R, Künecke U, Thuaire A, Mermoux M, Pons M, Wellmann P (2006)
Publication Language: English
Publication Status: Published
Publication Type: Journal article
Publication year: 2006
Publisher: Wiley - V C H Verlag GmbbH & Co.
City/Town: Weinheim
Book Volume: 3
Pages Range: 558-561
Conference Proceedings Title: Physica Status Solidi C: Conferences 3, No.3
Journal Issue: 3
in the production of highly aluminum doped SiC bulk crystals, a need arises for a fast and simple method to estimate the hole concentration in the material for process control and optimization. An approach for a characterization method using Raman spectroscopy is presented. We established a calibration curve along with an empirical function to determine the charge carrier concentration in p-type SiC from the line width of a linear optical phonon - plasmon coupled (LOPC) mode. At charge carrier concentrations below 10(18) cm(-3), a good precision with a relative error of 10 to 15 % for the hole concentration can be obtained. At charge carrier concentrations of p > 10(19) cm(-3), the relative error rises to 50 % for p because of the low signal/noise ratio in the LOPC spectra. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.
APA:
Müller, R., Künecke, U., Thuaire, A., Mermoux, M., Pons, M., & Wellmann, P. (2006). Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering. Physica Status Solidi C: Conferences, 3(3), 558-561. https://doi.org/10.1002/pssc.200564148
MLA:
Müller, Ralf, et al. "Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering." Physica Status Solidi C: Conferences 3.3 (2006): 558-561.
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