A New Compact Model for the Avalanche Effect in InAlAs/InGaAs HBTs

Weiß O, Baureis P, Kellmann N, Weber N, Weigel R (2006)

Publication Type: Journal article

Publication year: 2006

Journal

IEEE Electron Device Letters Institute of Electrical and Electronics Engineers (IEEE)

Publisher: IEEE

Book Volume: 27

Pages Range: 431-434

DOI: 10.1109/LED.2006.875724

Abstract

This letter presents a new compact model for the avalanche effect in InAlAs/InGaAs heterojunction bipolar transistors. Unlike previous models, it is based on the formulation of the avalanche multiplication by Lee (Phys. Rev., vol. 134, p. A761, 1964), which allows the model to be valid for even larger current densities than before. The description of the ionization coefficient takes into account the anomaly of the ionization coefficient of InGaAs at low electric fields. The new model is successfully verified by measurements in a conventional common-base setup.

Authors with CRIS profile

Robert Weigel Lehrstuhl für Technische Elektronik

How to cite

APA:

Weiß, O., Baureis, P., Kellmann, N., Weber, N., & Weigel, R. (2006). A New Compact Model for the Avalanche Effect in InAlAs/InGaAs HBTs. IEEE Electron Device Letters, 27, 431-434. https://dx.doi.org/10.1109/LED.2006.875724

MLA:

Weiß, Oliver, et al. "A New Compact Model for the Avalanche Effect in InAlAs/InGaAs HBTs." IEEE Electron Device Letters 27 (2006): 431-434.

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