Study of high quality spinel zinc gallate nanowires grown using CVD and ALD techniques
Kumar S, Sarau G, Tessarek C, Göbelt M, Christiansen S, Singh R (2015)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2015
Journal
Publisher: Institute of Physics Publishing
Book Volume: 26
Article Number: 335603
Journal Issue: 33
DOI: 10.1088/0957-4484/26/33/335603
Abstract
High quality single crystalline zinc gallate (ZnGa2O4) nanowires (NWs) were grown using a combination of chemical vapor deposition and atomic layer deposition techniques. Morphological, structural and optical investigations revealed the formation of Ga2O3-ZnO core-shell NWs and their conversion into ZnGa2O4 NWs after annealing via a solid state reaction. This material conversion was systematically confirmed for single NWs by various measurement techniques including scanning and transmission electron microscopy, Raman spectroscopy and voltage-dependent cathodoluminescence. Moreover, a model system based on the obtained results has been provided explaining the formation mechanism of the ZnGa2O4 NWs.
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APA:
Kumar, S., Sarau, G., Tessarek, C., Göbelt, M., Christiansen, S., & Singh, R. (2015). Study of high quality spinel zinc gallate nanowires grown using CVD and ALD techniques. Nanotechnology, 26(33). https://doi.org/10.1088/0957-4484/26/33/335603
MLA:
Kumar, Sudheer, et al. "Study of high quality spinel zinc gallate nanowires grown using CVD and ALD techniques." Nanotechnology 26.33 (2015).
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