Grebennikov A, Jäger H, Weigel R (2003)
Publication Type: Conference contribution
Publication year: 2003
Publisher: European Microwave Association
Pages Range: 313-316
Conference Proceedings Title: European Conference on Wireless Technology 2003 (EuWiT)
Event location: Munich, Germany
Modern trends in wireless telecommunication systems require low cost and highly efficient solutions, which enable a long talk-time. The proposed new circuit design solutions for power amplifiers provide broadband and high efficiency operation conditions and insensitivity to bias voltage variations. For the output matching configuration, a novel Class E parallel-circuit load network, followed by a microstrip L-type matching circuit is introduced. A bias circuit, based on a differential amplifier, provides a constant quiescent current within the voltage range of 2.6-2.9 V. Practical results for high-efficiency linear multi-band and multimode two-stage and three-stage InGaP/GaAs HBT power amplifiers, intended to operate across DCS1800, PCS1900, CDMA2000 and WCDMA frequency bands, with poweradded efficiency of 50\% and more, covering the frequency range from 1.7 GHz to 2.0 GHz, are shown.
APA:
Grebennikov, A., Jäger, H., & Weigel, R. (2003). High-Efficiency Class E Monolithic HBT Power Amplifiers for Wireless Applications. In European Conference on Wireless Technology 2003 (EuWiT) (pp. 313-316). Munich, Germany: European Microwave Association.
MLA:
Grebennikov, Andrej, Herbert Jäger, and Robert Weigel. "High-Efficiency Class E Monolithic HBT Power Amplifiers for Wireless Applications." Proceedings of the European Conference on Wireless Technology 2003 (EuWiT), Munich, Germany European Microwave Association, 2003. 313-316.
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