Pobegen G, Weiße J, Hauck M, Weber HB, Krieger M (2016)
Publication Language: English
Publication Type: Journal article, Letter
Publication year: 2016
Publisher: Trans Tech Publications
Book Volume: 858
Journal Issue: 473
DOI: 10.4028/www.scientific.net/MSF.858.473
APA:
Pobegen, G., Weiße, J., Hauck, M., Weber, H.B., & Krieger, M. (2016). On the origin of threshold voltage instability under operating conditions of 4H-SiC n-channel MOSFETs. Materials Science Forum, 858(473). https://doi.org/10.4028/www.scientific.net/MSF.858.473
MLA:
Pobegen, Gregor, et al. "On the origin of threshold voltage instability under operating conditions of 4H-SiC n-channel MOSFETs." Materials Science Forum 858.473 (2016).
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