Chakraborty A, Kissinger D, Lämmle B, Hartnagel H, Weigel R (2010)
Publication Type: Conference contribution
Publication year: 2010
Publisher: IEEE
Conference Proceedings Title: German Microwave Conference
Event location: Berlin, Germany
ISBN: 978-1-4244-4933-0
URI: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5498273
This paper presents the design of single-ended, double stage cascode low noise amplifiers at 120 GHz. A design methodology employing three techniques for gain enhancement of the LNA is presented. The effect of traditional emitter - degeneration technique and its feasibility for simultaneous noise and power matching is evaluated at 120 GHz. The LNAs are designed in a 250 GHz fT and 300 GHz fmax 0.13 μm SiGe:C BiCMOS process. By employing the three design techniques the gain of the LNA is improved by almost 3.5 dB. The two stage gain optimized LNA achieves a gain of 24 dB and a noise figure of 7.2 dB. The circuit works with a supply voltage of 3.3 V and consumes less than 40 mW of power.
APA:
Chakraborty, A., Kissinger, D., Lämmle, B., Hartnagel, H., & Weigel, R. (2010). Design of Gain Optimized Broadband Low Noise Amplifiers at 120 GHz using SiGe Technology. In German Microwave Conference. Berlin, Germany: IEEE.
MLA:
Chakraborty, Abhiram, et al. "Design of Gain Optimized Broadband Low Noise Amplifiers at 120 GHz using SiGe Technology." Proceedings of the German Microwave Conference, Berlin, Germany IEEE, 2010.
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