Kissinger D, Aufinger K, Meister T, Maurer L, Weigel R (2010)
Publication Type: Conference contribution
Publication year: 2010
Publisher: IEEE
Pages Range: 1501-1504
Conference Proceedings Title: Asia-Pacific Microwave Conference (APMC 2010)
Event location: Yokohama, Japan
ISBN: 978-1-4244-7590-2
URI: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5728168
This paper presents a broadband differential current re-use low-noise amplifier with 30\% fractional bandwidth at a center frequency of 66 GHz. The circuit has been manufactured in an advanced SiGe:C HBT technology with ft/fmax = 220/285 GHz. The amplifier is unconditionally stable and achieves a maximum differential gain of 19.7 dB while operating over a 3-dB bandwidth of 22 GHz. At the upper corner frequency of 77 GHz the amplifier exhibits a noise figure of 5.8 dB and linearity measurements show a 1-dB output referred compression point above +3 dBm. The circuit consumes 40 mW from a 3.3 V supply and occupies a chip area of 728 × 728 μm2 including bond pads.
APA:
Kissinger, D., Aufinger, K., Meister, T., Maurer, L., & Weigel, R. (2010). A High-Linearity Broadband 55-77 GHz Differential Low-Noise Amplifier with 20 dB Gain in SiGe Technology. In Asia-Pacific Microwave Conference (APMC 2010) (pp. 1501-1504). Yokohama, Japan: IEEE.
MLA:
Kissinger, Dietmar, et al. "A High-Linearity Broadband 55-77 GHz Differential Low-Noise Amplifier with 20 dB Gain in SiGe Technology." Proceedings of the Asia-Pacific Microwave Conference (APMC 2010), Yokohama, Japan IEEE, 2010. 1501-1504.
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