Comparison of gm-boosted oscillators in silicon field effect transistor and silicon-germanium hetero-junction bipolar transistor technology

Ußmüller T, Seemann K, Weigel R (2009)

Publication Type: Conference contribution

Publication year: 2009

Pages Range: 258-261

Conference Proceedings Title: Wireless Technology Conference, 2009. EuWIT 2009. European

URI: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5291047

Abstract

This paper presents two gm-boosted VCOs. One VCO is built with Si MOS field effect transistors. The second one is built with SiGe bipolar transistors. Both VCOs are designed to cover a large tuning range from 5.2 GHz to 5.9 GHz and to minimize the power dissipation. Measured results for both oscillators are shown. Finally the performance of both oscillators is compared and analyzed.

Authors with CRIS profile

Thomas Ußmüller Lehrstuhl für Technische Elektronik Robert Weigel Lehrstuhl für Technische Elektronik

How to cite

APA:

Ußmüller, T., Seemann, K., & Weigel, R. (2009). Comparison of gm-boosted oscillators in silicon field effect transistor and silicon-germanium hetero-junction bipolar transistor technology. In Wireless Technology Conference, 2009. EuWIT 2009. European (pp. 258-261).

MLA:

Ußmüller, Thomas, Kay Seemann, and Robert Weigel. "Comparison of gm-boosted oscillators in silicon field effect transistor and silicon-germanium hetero-junction bipolar transistor technology." Proceedings of the Wireless Technology Conference, 2009. EuWIT 2009. European 2009. 258-261.

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