Hupfer T, Hens P, Kaiser M, Jokubavicius V, Syväjärvi M, Wellmann P (2013)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2013
Publisher: Trans Tech Publications
City/Town: Switzerland
Book Volume: 740-742
Pages Range: 52-55
Conference Proceedings Title: Materials Science Forum (Volumes 740-742)
Event location: St. Petersburg
ISBN: 9783037856246
DOI: 10.4028/www.scientific.net/MSF.740-742.52
Two growth regions with different limitation of growth speed are observed in the fast sublimation growth process of silicon carbide. Using suggested theoretical model for the mean free path calculations, the influences of temperature and inert gas pressure on the mass transport for the growth of epitaxial layers were considered theoretically and confirmed by experimental data. © (2013) Trans Tech Publications, Switzerland.
APA:
Hupfer, T., Hens, P., Kaiser, M., Jokubavicius, V., Syväjärvi, M., & Wellmann, P. (2013). Modeling of the mass transport during the homo-epitaxial growth of silicon carbide by fast sublimation epitaxy. Materials Science Forum, 740-742, 52-55. https://doi.org/10.4028/www.scientific.net/MSF.740-742.52
MLA:
Hupfer, Thomas, et al. "Modeling of the mass transport during the homo-epitaxial growth of silicon carbide by fast sublimation epitaxy." Materials Science Forum 740-742 (2013): 52-55.
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