Hartmann M, Wagner C, Seemann K, Platz J, Jäger H, Weigel R (2007)
Publication Type: Conference contribution
Publication year: 2007
Pages Range: 149-152
Conference Proceedings Title: IEEE Radio Frequency Integrated Circuits Symposium
Event location: Honolulu, HI, USA
ISBN: 978-1-4244-0530-5
This paper presents a single chip receiver front-end, including low-noise amplifier and mixer, for application in automotive radar systems at 77 GHz. The circuit has been implemented in a SiGe HBT technology. The complete circuit occupies 1030 times 1130 mum2 including bond pads and dissipates 440 mW from a 5.5 V supply. The front-end shows a minimum measured single sideband noise figure (SSB NF) of 11.5 dB and a maximum conversion gain of 30 dB at 77 GHz. Linearity measurements show a 1 dB input compression point of -26 dBm and a third order intercept point of -21.6 dBm at 77 GHz.
APA:
Hartmann, M., Wagner, C., Seemann, K., Platz, J., Jäger, H., & Weigel, R. (2007). A Low-Power Low-Noise Single-Chip Receiver Front-End for Automotive Radar at 77 GHz in Silicon-Germanium Bipolar Technology. In IEEE Radio Frequency Integrated Circuits Symposium (pp. 149-152). Honolulu, HI, USA.
MLA:
Hartmann, Marcus, et al. "A Low-Power Low-Noise Single-Chip Receiver Front-End for Automotive Radar at 77 GHz in Silicon-Germanium Bipolar Technology." Proceedings of the IEEE Radio Frequency Integrated Circuits Symposium, Honolulu, HI, USA 2007. 149-152.
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