Fischer G, Würfl HJ, Behtash R, Richard l, Liero A, Heinrich W, Tränkle G, Hirche K (2006)
Publication Type: Conference contribution
Publication year: 2006
Publisher: IEEE
Pages Range: 1716-1718
Conference Proceedings Title: European Microwave Week
Event location: Manchester
Journal Issue: 9407204
ISBN: 978-2-9600551-6-0
Progress in fabrication of packaged discrete L- and X-band power AlGaN/GaN HFETs is presented. By exploiting typical GaN HFET related features such as improved linearity, power density, gain and broad band capability the devices allow for novel architectures for base stations in mobile communications and for space applications. Highlights to be presented are L-band power bar devices designed for continuous wave (cw) operation delivering an cw output power of 30 W and 100 W with 20 dB and 14 dB linear gain respectively. The architecture of these devices is based on novel gate "feed plate" structures. Furthermore discrete, hermetically packaged X-band devices for space based SSPAs in the power range of 10 W (continuous wave) at 8 GHz are presented.
APA:
Fischer, G., Würfl, H.-J., Behtash, R., Richard, l., Liero, A., Heinrich, W.,... Hirche, K. (2006). Advances in GaN-based discrete power devices for L- and X-band applications. In European Microwave Week (pp. 1716-1718). Manchester: IEEE.
MLA:
Fischer, Georg, et al. "Advances in GaN-based discrete power devices for L- and X-band applications." Proceedings of the European Microwave Week, Manchester IEEE, 2006. 1716-1718.
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