A Single-Chip Si-Bipolar 1.6-GHz VCO with Integrated-Bias Network

Zannoth M, Fenk J, Springer A, Weigel R (2000)

Publication Type: Journal article

Publication year: 2000

Journal

IEEE Transactions on Microwave Theory and Techniques Institute of Electrical and Electronics Engineers (IEEE)

Publisher: IEEE

Book Volume: 48

Pages Range: 203-205

Journal Issue: 2

Abstract

A single-chip 2.7-V voltage-controlled oscillator (VCO) with an integrated-bias network has been implemented in an Si-bipolar process with an fT of 25 GHz. With an on-chip resonator consisting of vertically coupled inductors and varactor diodes, an oscillation frequency of 1.56 GHz was measured. A careful design of the oscillator and bias network was necessary to achieve a phase noise performance of -139 dBc/Hz at 4.7 h MHz off carrier. The tuning sensitivity was 100 MHz/V, which is sufficient to compensate for production tolerances. The VCO can be used as a building block for single-chip transceivers in digital European cordless telephone or global system for mobile communication systems.

Authors with CRIS profile

Robert Weigel Lehrstuhl für Technische Elektronik

Involved external institutions

Johannes Kepler Universität (JKU) Linz AT Austria (AT)

How to cite

APA:

Zannoth, M., Fenk, J., Springer, A., & Weigel, R. (2000). A Single-Chip Si-Bipolar 1.6-GHz VCO with Integrated-Bias Network. IEEE Transactions on Microwave Theory and Techniques, 48(2), 203-205.

MLA:

Zannoth, Markus, et al. "A Single-Chip Si-Bipolar 1.6-GHz VCO with Integrated-Bias Network." IEEE Transactions on Microwave Theory and Techniques 48.2 (2000): 203-205.

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