Bakalski W, Kitlinski K, Donig G, Kapfelsperger B, Österreicher W, Auchter W, Weigel R, Scholtz A (2004)
Publication Type: Conference contribution
Publication year: 2004
Pages Range: 567-570
Conference Proceedings Title: Radio Frequency Integrated Circuits (RFIC) Symposium
DOI: 10.1109/RFIC.2004.1320684
An integrated wireless LAN radio frequency power amplifier (PA) for 5.25 GHz has been realized in a 40 GHz-fT, 0.35 μm-SiGe-bipolar technology. The single-ended 3-stage power amplifier uses on-chip inductors and a short on-chip stripline for the interstage matching. At 3.3 V supply voltage the OP1dB is 23.8 dBm, and a saturated output power of 25.9 dBm is achieved at 5.25 GHz. The PAE at the OP1dB is 24\%. The small-signal gain is 27 dB.
APA:
Bakalski, W., Kitlinski, K., Donig, G., Kapfelsperger, B., Österreicher, W., Auchter, W.,... Scholtz, A. (2004). A 5.25 GHz SiGe bipolar power amplifier for IEEE 802.11a wireless LAN. In Radio Frequency Integrated Circuits (RFIC) Symposium (pp. 567-570).
MLA:
Bakalski, Winfried, et al. "A 5.25 GHz SiGe bipolar power amplifier for IEEE 802.11a wireless LAN." Proceedings of the Radio Frequency Integrated Circuits (RFIC) Symposium 2004. 567-570.
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