Lämmle B, Schmalz K, Scheytt C, Kölpin A, Weigel R (2010)
Publication Type: Conference contribution
Publication year: 2010
Publisher: IEEE
Pages Range: 806-809
Conference Proceedings Title: Asia-Pacific Microwave Conference (APMC 2010)
Event location: Yokohama, Japan
ISBN: 978-1-4244-7590-2
URI: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5728463
In this paper directional couplers with reduced size, by lumped elements, inverted microstrip, and broadside coupled lines at 61, 110, and 122 GHz center frequency and up to 156-GHz bandwidth have been designed. The couplers show an isolation up to 40 dB. Different SiGe BiCMOS technologies with 250-nm and 130-nm feature width and 5 to 7 metal layers have been used. The measurement results have been compared to simulation results and good agreement has been observed.
APA:
Lämmle, B., Schmalz, K., Scheytt, C., Kölpin, A., & Weigel, R. (2010). Directional Couplers from 30 to 140 GHz in Silicon. In Asia-Pacific Microwave Conference (APMC 2010) (pp. 806-809). Yokohama, Japan: IEEE.
MLA:
Lämmle, Benjamin, et al. "Directional Couplers from 30 to 140 GHz in Silicon." Proceedings of the Asia-Pacific Microwave Conference (APMC 2010), Yokohama, Japan IEEE, 2010. 806-809.
BibTeX: Download