Single-Chip 20 GHz VCO and Frequency Divider in SiGe Technology
Ettinger K, Stelzer A, Diskus C, Thomann W, Fenk J, Weigel R (2002)
Publication Type: Journal article
Publication year: 2002
Journal
Publisher: IEEE
Pages Range: 835-838
DOI: 10.1109/MWSYM.2002.1011760
Abstract
This paper presents the design, implementation and testing of a fully integrated 20 GHz voltage controlled oscillator, a frequency divider with a divide ratio of 16, as well as an output driver. All blocks are integrated on one IC with an area of 890 × 890 μm 2 and are fabricated in a production SiGe bipolar technology. The VCO is a varactor-tuned LC-type oscillator with a tuning range of 600 MHz. The differential signal of the output driver is converted to a single-ended signal by an external microstrip balun and delivers a maximum of 2 dBm of output power into a 50 Ω load. The chip works with a single supply voltage of 3.6 V, the VCO draws 12 mA of supply current, divider and output driver consume 17 mA and 51 mA, respectively. The measured phase-noise of the VCO is -85 dBc/Hz at 1 MHz offset frequency
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APA:
Ettinger, K., Stelzer, A., Diskus, C., Thomann, W., Fenk, J., & Weigel, R. (2002). Single-Chip 20 GHz VCO and Frequency Divider in SiGe Technology. IEEE MTT-S International Microwave Symposium Digest, 835-838. https://doi.org/10.1109/MWSYM.2002.1011760
MLA:
Ettinger, Klaus, et al. "Single-Chip 20 GHz VCO and Frequency Divider in SiGe Technology." IEEE MTT-S International Microwave Symposium Digest (2002): 835-838.
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