A single-chip Si-bipolar 1.6 GHz VCO with integrated bias network
Zannoth M, Fenk J, Springer A, Weigel R (1999)
Publication Type: Conference contribution
Publication year: 1999
Pages Range: 117-120
Conference Proceedings Title: IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
Event location: Anaheim, USA
ISBN: 978-0-7803-5604-7
Abstract
A single-chip 2.7 V voltage-controlled oscillator (VCO) with integrated bias network has been implemented in a Si-bipolar process with a fT of 25 GHz. With an on-chip resonator consisting of vertically coupled inductors and varactor diodes an oscillation frequency of 1.56 GHz was measured. A careful design of the oscillator and the bias network was necessary to achieve a phase noise performance of -139 dBc/Hz at 4.7 MHz off carrier. The tuning sensitivity was 100 MHz/V, which is sufficient to compensate for production tolerances. The VCO can be used as a building block for single-chip transceivers in DECT- or GSM-systems
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Austria (AT)How to cite
APA:
Zannoth, M., Fenk, J., Springer, A., & Weigel, R. (1999). A single-chip Si-bipolar 1.6 GHz VCO with integrated bias network. In IEEE Radio Frequency Integrated Circuits (RFIC) Symposium (pp. 117-120). Anaheim, USA.
MLA:
Zannoth, Markus, et al. "A single-chip Si-bipolar 1.6 GHz VCO with integrated bias network." Proceedings of the IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Anaheim, USA 1999. 117-120.
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