Clark T (1995)
Publication Status: Published
Publication Type: Journal article
Publication year: 1995
Publisher: Wiley-VCH Verlag
Book Volume: 7
Pages Range: 927-&
Journal Issue: 11
The conductivity of bulk polysilanes is reported to occur via the migration of holes. Since there is considerable sigma delocalization along the backbone of polysilanes these materials can be considered as a one-dimensional molecular wire, the backbone being the wire and the alkyl side groups acting as the insulator. Here, quantum mechanical calculations on the polysilane model compound Si-17(CH3)(36) aimed at elucidation of the electronic properties related to electrical conductance are presented.
APA:
Clark, T. (1995). POLARON MIGRATION IN DOPED POLYSILANES - AM1 CALCULATIONS ON THE RADICAL-CATION SI-17(CH3)(36)(+). Advanced Materials, 7(11), 927-&.
MLA:
Clark, Timothy. "POLARON MIGRATION IN DOPED POLYSILANES - AM1 CALCULATIONS ON THE RADICAL-CATION SI-17(CH3)(36)(+)." Advanced Materials 7.11 (1995): 927-&.
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