Reduction of the ZnSe/GaAs(100) valence band offset by a Te interlayer
Gleim T, Heske C, Umbach E, Schumacher C, Faschinger W, Ammon C, Probst M, Steinrück HP (2001)
Publication Type: Journal article, Original article
Publication year: 2001
Journal
Original Authors: Gleim Th., Heske C., Umbach E., Schumacher C., Faschinger W., Ammon Ch., Probst M., Steinrück H.-P.
Publisher: American Institute of Physics (AIP)
Book Volume: 78
Pages Range: 1867-1869
Journal Issue: 13
DOI: 10.1063/1.1358366
Abstract
For the heterovalent system ZnSe/GaAs(100), we have investigated the influence of a Te pretreatment of the substrate on the electronic structure of the interface by photoelectron spectroscopy. We have paid special attention to correctly determine the valence band maximum in a k-resolved fashion, including the use of photon energies which enable excitation at the Γ point. We find that the Te pretreatment leads to a decrease of the valence band discontinuity as large as 0.3 eV. From photoemission depth profiling we conclude that some Te atoms remain localized at the interface, thus causing the change of the valence band offset while others float on the ZnSe surface, probably acting as surfactants. © 2001 American Institute of Physics.
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APA:
Gleim, T., Heske, C., Umbach, E., Schumacher, C., Faschinger, W., Ammon, C.,... Steinrück, H.-P. (2001). Reduction of the ZnSe/GaAs(100) valence band offset by a Te interlayer. Applied Physics Letters, 78(13), 1867-1869. https://doi.org/10.1063/1.1358366
MLA:
Gleim, Thomas, et al. "Reduction of the ZnSe/GaAs(100) valence band offset by a Te interlayer." Applied Physics Letters 78.13 (2001): 1867-1869.
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