Rumler M, Fader R, Haas A, Rommel M, Bauer A, Frey L (2013)
Publication Type: Journal article, Original article
Publication year: 2013
Publisher: Institute of Physics: Hybrid Open Access
Book Volume: 24
Pages Range: 365302
Article Number: 365302
Journal Issue: 36
DOI: 10.1088/0957-4484/24/36/365302
This paper presents an alternative rapid prototyping approach for the fabrication of stamps for UV nanoimprint lithography. In this process, areas implanted with gallium serve as an etch mask for the dry etching of quartz. The implantation is performed using a focused ion beam system. To avoid charging of the quartz substrate the use of thin layers of chromium or carbon on the quartz substrate has been evaluated. The resulting quartz structures exhibit very smooth surfaces after dry etching, if the implantation dose is high enough to form a stable etch mask. Furthermore, anisotropic etching could be realized by optimization of a quartz etching process involving C4F8 and O2 after the use of resistless Ga+ beam lithography. Finally, imprints into a UV curing resist are performed successfully with the manufactured stamps, proving that the presence of Ga rich areas on the stamp is not detrimental to the curing of the resist or the functionality of the anti-sticking layer. © 2013 IOP Publishing Ltd.
APA:
Rumler, M., Fader, R., Haas, A., Rommel, M., Bauer, A., & Frey, L. (2013). Evaluation of resistless Ga+ beam lithography for UV NIL stamp fabrication. Nanotechnology, 24(36), 365302. https://doi.org/10.1088/0957-4484/24/36/365302
MLA:
Rumler, Maximilian, et al. "Evaluation of resistless Ga+ beam lithography for UV NIL stamp fabrication." Nanotechnology 24.36 (2013): 365302.
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