A fully integrated 120-GHz six-port receiver front-end in a 130-nm SiGe BiCMOS technology

Lämmle B, Schmalz K, Borngraeber J, Scheytt C, Weigel R, Kölpin A, Kissinger D (2013)

Publication Type: Conference contribution

Publication year: 2013

Pages Range: 129-131

Event location: Austin, TX

DOI: 10.1109/SiRF.2013.6489455

Abstract

A fully integrated six-port receiver front-end at 120 GHz center frequency including a low-noise-amplifier, a passive six-port network, a VCO, and four direct converters is presented in this publication. The overall architecture of the designed six-port receiver is analyzed and fundamental theory of the receiver given. The design of the six-port building blocks is described and measurement results are presented. All circuits have been fabricated in a 0.13μm 300-GHz fT SiGe BiCMOS technology. The fully integrated receiver consumes 85.9 rnA from a 3.3-V supply and occupies an area of 1.03mm2. The receiver includes a VCO with a center frequency of 117.15 GHz, a tuning range of 2.7 GHz, and a phase noise of -86 dBc/Hz at 1 MHz offset. The LNA shows a gain of 12 dB, a 3-dB bandwidth of 30 GHz at a power consumption of 9.2 rnA. The six-port core has a conversion gain of 3.6 dB, a P1dB of -12 dBm, and a power consumption of 28 rnA. The overall receiver shows a conversion gain of 2.4 dB at 120 GHz and P1dB of -17 dBm.

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How to cite

APA:

Lämmle, B., Schmalz, K., Borngraeber, J., Scheytt, C., Weigel, R., Kölpin, A., & Kissinger, D. (2013). A fully integrated 120-GHz six-port receiver front-end in a 130-nm SiGe BiCMOS technology. In Proceedings of the 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (pp. 129-131). Austin, TX, US.

MLA:

Lämmle, Benjamin, et al. "A fully integrated 120-GHz six-port receiver front-end in a 130-nm SiGe BiCMOS technology." Proceedings of the 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Austin, TX 2013. 129-131.

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