A fully integrated bulk-CMOS switch based tunable transformer for RF and antenna matching

Bakalski W, Thomas A, Weigel R (2013)


Publication Type: Conference contribution

Publication year: 2013

Pages Range: 142-144

Conference Proceedings Title: IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)

Event location: Santa Clara, CA US

DOI: 10.1109/PAWR.2013.6490216

Abstract

A fully integrated tunable RF impedance matching network based on a transformer topology and on-chip RF switches is presented. Using the Infineon 130 nm Bulk-CMOS RF switch process with 2.4 μm alumina top metal, the chip integrates a 4-bit digitally tunable capacitor, a planar transformer with 4 independent windings and 12 taps, an on-chip charge pump and RF switches to control the operating mode of capacitor and the transformer. The circuit offers the possibility to cover the Smith Chart at either low and high impedance up to a VSWR of 10 on the GSM band 790-960 MHz. In by-pass mode the insertion loss is 0.8 dB at 850 MHz and features a harmonic generation of - 85 dBc (H2) and -75 dBc (H3) without the need of any external devices or extra controller. The current consumption at 1.5 V is 120 μA.

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How to cite

APA:

Bakalski, W., Thomas, A., & Weigel, R. (2013). A fully integrated bulk-CMOS switch based tunable transformer for RF and antenna matching. In IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR) (pp. 142-144). Santa Clara, CA, US.

MLA:

Bakalski, Winfried, Anthony Thomas, and Robert Weigel. "A fully integrated bulk-CMOS switch based tunable transformer for RF and antenna matching." Proceedings of the IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR), Santa Clara, CA 2013. 142-144.

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