Band discontinuities and local interface composition in BeTe/ZnSe heterostructures
Nagelstraßer M, Dröge H, Fischer F, Litz T, Waag A, Landwehr G, Steinrück HP (1998)
Publication Type: Journal article, Original article
Publication year: 1998
Journal
Original Authors: Nagelstrasser M., Dröge H., Fischer F., Litz T., Waag A., Landwehr G., Steinrück H.-P.
Publisher: American Institute of Physics (AIP)
Book Volume: 83
Pages Range: 4253-4257
Journal Issue: 8
DOI: 10.1063/1.367231
Abstract
Using photoelectron spectroscopy, we have investigated the band alignment at the interface of pseudomorphic BeTe/ZnSe(100) heterojunctions for different interface terminations. The heterostructures of high structural quality have been produced by molecular beam epitaxy; the interface termination was adjusted by variation of the growth parameters between the growth process of ZnSe and BeTe. The valence band offset for a Zn-rich BeTe/ZnSe interface is determined to be 1.26±0.15 eV, for the Se-rich BeTe/ZnSe interface a value of 0.46±0.15 eV is obtained. Our results show that the band alignment can be modified by the interface composition even for isovalent heterostructures. © 1998 American Institute of Physics.
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APA:
Nagelstraßer, M., Dröge, H., Fischer, F., Litz, T., Waag, A., Landwehr, G., & Steinrück, H.-P. (1998). Band discontinuities and local interface composition in BeTe/ZnSe heterostructures. Journal of Applied Physics, 83(8), 4253-4257. https://doi.org/10.1063/1.367231
MLA:
Nagelstraßer, M., et al. "Band discontinuities and local interface composition in BeTe/ZnSe heterostructures." Journal of Applied Physics 83.8 (1998): 4253-4257.
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