Argon desorption as a tool to study the growth of molecular layers
Stichler M, Zebisch P, Weinelt M, Steinrück HP (1996)
Publication Type: Journal article, Original article
Publication year: 1996
Journal
Original Authors: Stichler M., Zebisch P., Weinelt M., Steinrück H.-P.
Publisher: Elsevier
Book Volume: 348
Pages Range: 370-378
Journal Issue: 3
DOI: 10.1016/0039-6028(95)01036-X
Abstract
We demonstrate that temperature programmed desorption (TPD) of argon is a sensitive and non-destructive probe to study the properties of an underlying substrate: the desorption temperatures of the first argon layer from the clean Ni(111) surface, the saturated chemisorbed benzene layer, the first physisorbed benzene layer (on top of chemisorbed benzene) and thicker physisorbed benzene layers on Ni(111) are determined to 39.0, 43.5, 36.5 and 30-32 K, respectively. We have applied argon desorption to investigate the initial growth behavior of physisorbed benzene layers on top of the chemisorbed (√7×√7)R19.1° benzene layer on Ni(111): the argon TPD spectra show that the growth mode of the first physisorbed benzene layers strongly depends on adsorption temperature and on the number of defects in the chemisorbed layer.
Authors with CRIS profile
Involved external institutions
Germany (DE)How to cite
APA:
Stichler, M., Zebisch, P., Weinelt, M., & Steinrück, H.-P. (1996). Argon desorption as a tool to study the growth of molecular layers. Surface Science, 348(3), 370-378. https://doi.org/10.1016/0039-6028(95)01036-X
MLA:
Stichler, M., et al. "Argon desorption as a tool to study the growth of molecular layers." Surface Science 348.3 (1996): 370-378.
BibTeX: Download