Albrecht M, Hürner A, Erlbacher T, Bauer A, Frey L (2017)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2017
Publisher: Trans Tech Publications Ltd
Book Volume: 897
Pages Range: 665-668
ISBN: 9783035710434
DOI: 10.4028/www.scientific.net/MSF.897.665
In this work, the feasibility of the Bipolar-Injection Field Effect-Transistor (BIFET) [5] in two different Dual Thyristor type circuits [4] for an application as solid-state circuit breaker (SSCB) is experimentally verified. The Dual Thyristor type circuits are assembled from discrete silicon JFETs and a silicon carbide BIFET and are electrically characterized at various temperatures. The current-voltage characteristic shows the expected regenerative self-triggered turn-off capability under over-currents and the option to control the turn-off current by a passive resistor network. The issue with the adverse positive temperature coefficient of the trigger-current can be solved by putting the SiC BIFET in a cascode arrangement with a silicon Dual Thyristor. In this configuration the SiC BIFET provides the high voltage blocking capability and the silicon Dual Thyristor with its negative temperature coefficient controls the trigger-current. Transient analyses of both circuits indicate fast switching times of less than 50 μs seconds. It is demonstrated for the first time, that the SiC BIFET, due to its normally-on behaviour, used in a Dual Thyristor type circuit is a promising concept for self-triggered fuses in high current and high voltage applications.
APA:
Albrecht, M., Hürner, A., Erlbacher, T., Bauer, A., & Frey, L. (2017). Experimental verification of a self-triggered solid-state circuit breaker based on a SiC BIFET. Materials Science Forum, 897, 665-668. https://doi.org/10.4028/www.scientific.net/MSF.897.665
MLA:
Albrecht, Matthäus, et al. "Experimental verification of a self-triggered solid-state circuit breaker based on a SiC BIFET." Materials Science Forum 897 (2017): 665-668.
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