Power Control of a Switching Amplifier for GSM Handsets

Koller R, Stelzer A, Freudenthaler K, Abt KH, Maurer L, Weigel R (2002)


Publication Type: Conference contribution

Publication year: 2002

Publisher: IEEE

Conference Proceedings Title: Asia-Pacific Microwave Conference (APMC)

Event location: Kyoto, Japan

Abstract

Maximizing the effciency of GSM handset power amplifers (PA) for a signifcant increase of talktime is the main aim in new design approaches. One of them is the utilization of switching amplifers, since they offer extremely high effciency and their disadvantages are not applicable to constantenvelope modulation schemes like GMSK used in the GSM system. Among them, the Class-E amplifer concept is best suited, because it allows about 80\% effciency, while maintaining an excellent output spectrum and reasonable gain. Since the power transistor operates as a switch, the input signal envelope is not reproduced accordingly at the output. In this paper, three ways of output power control are presented and compared: Variable supply voltage by utilizing a DC/DC converter, a serial transistor and PA mixed mode operation by reducing the gate voltage swing.

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How to cite

APA:

Koller, R., Stelzer, A., Freudenthaler, K., Abt, K.-H., Maurer, L., & Weigel, R. (2002). Power Control of a Switching Amplifier for GSM Handsets. In Asia-Pacific Microwave Conference (APMC). Kyoto, Japan: IEEE.

MLA:

Koller, Rainer, et al. "Power Control of a Switching Amplifier for GSM Handsets." Proceedings of the Asia-Pacific Microwave Conference (APMC), Kyoto, Japan IEEE, 2002.

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