Pei L, Duscher G, Steen C, Pichler P, Ryssel H, Napolitani E, De Salvador D, Piro AM, Terrasi AT, Severac F, Cristiano F, Ravichandran K, Gupta N, Windl W (2008)
Publication Type: Journal article, Original article
Publication year: 2008
Book Volume: 104
Article Number: 043507
Journal Issue: 4
DOI: 10.1063/1.2967713
APA:
Pei, L., Duscher, G., Steen, C., Pichler, P., Ryssel, H., Napolitani, E.,... Windl, W. (2008). Detailed arsenic concentration profiles at Si/SiO2 interfaces. Journal of Applied Physics, 104(4). https://doi.org/10.1063/1.2967713
MLA:
Pei, Lirong, et al. "Detailed arsenic concentration profiles at Si/SiO2 interfaces." Journal of Applied Physics 104.4 (2008).
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