Sledziewski T, Weber HB, Krieger M (2016)
Publication Language: English
Publication Type: Journal article, Letter
Publication year: 2016
Publisher: Trans Tech Publications
Book Volume: 858
Pages Range: 697-700
DOI: 10.4028/www.scientific.net/MSF.858.697
APA:
Sledziewski, T., Weber, H.B., & Krieger, M. (2016). Passivation and generation of states at P-implanted thermally grown and deposited n-type 4H-SiC / SiO2 interfaces. Materials Science Forum, 858, 697-700. https://doi.org/10.4028/www.scientific.net/MSF.858.697
MLA:
Sledziewski, Tomasz, Heiko B. Weber, and Michael Krieger. "Passivation and generation of states at P-implanted thermally grown and deposited n-type 4H-SiC / SiO2 interfaces." Materials Science Forum 858 (2016): 697-700.
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