Straubinger T, Bickermann M, Grau M, Hofmann HD, Kadinski L, Müller G, Selder M, Wellmann P, Winnacker A (2000)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2000
Publisher: Trans Tech Publications
City/Town: Switzerland
Book Volume: 338-342
Pages Range: 39-42
Conference Proceedings Title: Materials Science Forum (Volumes 338-342)
Event location: Research Triangle Park, North Carolina
DOI: 10.4028/www.scientific.net/MSF.338-342.39
The thermal data used were determined from pyrometrical measurements on the top and bottom of the crucible during the experiments and were combined with simulations of the 2-dimensional heat transfer in the assembly. The latter allowed us to obtain the temperatures (source, crystal) inside the reaction chamber which were not assessable by direct measurements.
APA:
Straubinger, T., Bickermann, M., Grau, M., Hofmann, H.-D., Kadinski, L., Müller, G.,... Winnacker, A. (2000). Growth rate control in SiC-physical vapor transport method through heat transfer modeling and non-stationary process conditions. Materials Science Forum, 338-342, 39-42. https://doi.org/10.4028/www.scientific.net/MSF.338-342.39
MLA:
Straubinger, Thomas, et al. "Growth rate control in SiC-physical vapor transport method through heat transfer modeling and non-stationary process conditions." Materials Science Forum 338-342 (2000): 39-42.
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