Weingärtner R, Bickermann M, Bushevoy S, Hofmann HD, Rasp M, Straubinger T, Wellmann P, Winnacker A (2001)
Publication Language: English
Publication Status: Published
Publication Type: Journal article
Publication year: 2001
Publisher: Elsevier
Book Volume: 80
Pages Range: 357-361
Journal Issue: 1-3
DOI: 10.1016/S0921-5107(00)00599-7
An optical characterization method for determination of spatial doping level concentration in n-type 4H-SiC and p-type GH-SIC is discussed. The absorption bands of free charge carriers at 460 nm in n-type 4H-SiC are used to determine its doping concentration. In p-type 6H-SiC, the band edge related absorption at 410 nm is a measure for the doping concentration. In both cases, Hall measurements are performed fur calibration. Various examples of SiC-wafer mappings are shown and the relationships to crystal growth conditions, i.e. control of duping level and distribution, are investigated. (C) 2001 Elsevier Science S.A. All rights reserved.
APA:
Weingärtner, R., Bickermann, M., Bushevoy, S., Hofmann, H.-D., Rasp, M., Straubinger, T.,... Winnacker, A. (2001). Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC. Materials Science and Engineering B-Advanced Functional Solid-State Materials, 80(1-3), 357-361. https://doi.org/10.1016/S0921-5107(00)00599-7
MLA:
Weingärtner, Roland, et al. "Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC." Materials Science and Engineering B-Advanced Functional Solid-State Materials 80.1-3 (2001): 357-361.
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