Schmitt H, Müller R, Maier M, Winnacker A, Wellmann P (2005)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2005
Book Volume: 483
Pages Range: 445-448
Conference Proceedings Title: Materials Science Forum (Volumes 483-485)
DOI: 10.4028/www.scientific.net/MSF.483-485.445
Several SiC bulk crystals were grown with erbium and ytterbium as doping materials. Erbium contents determined by secondary ion mass spectroscopy (SIMS) ranged from 1.2 (.) 10(14) cm(-3) to 1.04 (.) 10(15) cm(-3), while ytterbium contents were below SIMS detection limit. Photoluminescence (PL) investigations of the characteristic 4f-4f-transition lines revealed a reduced luminescence yield in highly nitrogen and aluminum co-doped samples. Also, samples without intentional co-doping grown on the C-face showed less luminescence intensity than those grown on the Si-face. A stabilizing effect of erbium doping on the 4H polytype was observed.
APA:
Schmitt, H., Müller, R., Maier, M., Winnacker, A., & Wellmann, P. (2005). Photoluminescence study of in-situ rare earth doped PVT-grown SiC single crystals. Materials Science Forum, 483, 445-448. https://doi.org/10.4028/www.scientific.net/MSF.483-485.445
MLA:
Schmitt, Holger, et al. "Photoluminescence study of in-situ rare earth doped PVT-grown SiC single crystals." Materials Science Forum 483 (2005): 445-448.
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