Müller R, Künecke U, Weingärtner R, Schmitt H, Desperrier P, Wellmann P (2005)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2005
Publisher: Trans Tech Publications
City/Town: Switzerland
Book Volume: 483
Pages Range: 31-34
Conference Proceedings Title: Materials Science Forum (Volumes 483-485)
DOI: 10.4028/www.scientific.net/MSF.483-485.31
Several highly aluminum doped SiC bulk crystals were grown with a modified PVT (M-PVT) method. To facilitate 4H-SiC formation, growth was conducted on the C-face. The samples were investigated using Hall measurements in the Van-der-Pauw geometry. Lowest room temperature values for specific resistivities were 0.09 &UOmega; cm for 6H-SiC and 0.2 &UOmega; cm for 4H-SiC, which are to our knowledge the lowest values yet reported in literature. Thus, resistivity values of < 0.2 &UOmega; cm, which are required for substrates in high power device applications, could be demonstrated for 4H-SiC. Remarkably, in very highly doped samples the type of conduction could not be determined by Hall measurements.
APA:
Müller, R., Künecke, U., Weingärtner, R., Schmitt, H., Desperrier, P., & Wellmann, P. (2005). High Al-doping of SiC using a modified PVT (M-PVT) growth set-up. Materials Science Forum, 483, 31-34. https://doi.org/10.4028/www.scientific.net/MSF.483-485.31
MLA:
Müller, Ralf, et al. "High Al-doping of SiC using a modified PVT (M-PVT) growth set-up." Materials Science Forum 483 (2005): 31-34.
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