Sakwe A, Müller R, Wellmann P (2007)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Erratum
Publication year: 2007
Publisher: Elsevier
Book Volume: 299
Pages Range: 234-234
Journal Issue: 1
DOI: 10.1016/j.jcrysgro.2006.10.196
APA:
Sakwe, A., Müller, R., & Wellmann, P. (2007). Erratum to “Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC”: [J. Crystal Growth 289 (2006) 520–526]. Journal of Crystal Growth, 299(1), 234-234. https://doi.org/10.1016/j.jcrysgro.2006.10.196
MLA:
Sakwe, Aloysius, Robin Müller, and Peter Wellmann. "Erratum to “Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC”: [J. Crystal Growth 289 (2006) 520–526]." Journal of Crystal Growth 299.1 (2007): 234-234.
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