Hens P, Syvaejaervi M, Oehlschläger F, Wellmann P, Yakimova R (2009)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2009
Book Volume: 615-617
Pages Range: 85-88
Conference Proceedings Title: Materials Science Forum (Volumes 615-617)
DOI: 10.4028/www.scientific.net/MSF.615-617.85
The co-doping of nitrogen and aluminum has been Studied in the sublimation epitaxy growth process. It is shown that the doping may be tuned from n-type to p-type by, effect of substrate, doping, growth face and volume of the growth crucible. The co-doped layers show a nearly ideal I-V characteristic and luminescence at room temperature.
APA:
Hens, P., Syvaejaervi, M., Oehlschläger, F., Wellmann, P., & Yakimova, R. (2009). P- and n-type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates. Materials Science Forum, 615-617, 85-88. https://doi.org/10.4028/www.scientific.net/MSF.615-617.85
MLA:
Hens, Philip, et al. "P- and n-type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates." Materials Science Forum 615-617 (2009): 85-88.
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