Schimmel S, Kaiser M, Hens P, Jokubavicius V, Liljedahl R, Sun J, Yakimova R, Ou Y, Ou H, Linnarsson MK, Wellmann P, Syväjärvi M (2013)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2013
Publisher: Trans Tech Publications
City/Town: Switzerland
Book Volume: 740-742
Pages Range: 185-188
Conference Proceedings Title: Materials Science Forum (Volumes 740-742)
Event location: St. Petersburg
DOI: 10.4028/www.scientific.net/MSF.740-742.185
Homoepitaxial layers of fluorescent 4H-SiC were grown on 4 degree off-axis substrates by sublimation epitaxy. Luminescence in the green spectral range was obtained by co-doping with nitrogen and boron utilizing donor-acceptor pair luminescence. This concept opens possibilities to explore green light emitting diodes using a new materials platform.
APA:
Schimmel, S., Kaiser, M., Hens, P., Jokubavicius, V., Liljedahl, R., Sun, J.,... Syväjärvi, M. (2013). Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates. Materials Science Forum, 740-742, 185-188. https://doi.org/10.4028/www.scientific.net/MSF.740-742.185
MLA:
Schimmel, Saskia, et al. "Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates." Materials Science Forum 740-742 (2013): 185-188.
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