Neubauer G, Salamon M, Uhlmann N, Wellmann P (2014)
Publication Language: English
Publication Status: Published
Publication Type: Journal article
Publication year: 2014
Publisher: Trans Tech Publications
City/Town: Switzerland
Book Volume: 778-780
Pages Range: 9-12
Conference Proceedings Title: Materials Science Forum Vols. 778-780
ISBN: 9783038350101
DOI: 10.4028/www.scientific.net/MSF.778-780.9
In this paper, we present our technique for obtaining a real-time 3-D volume shape of the SiC crystal using X-ray computed tomography (CT). In particular, it is possible to determine in-situ the shape of the growth interface with high precision at growth temperatures above 2000 °C in a conventional 3 physical vapor transport (PVT) growth system. We show that the size and shape of a facet can be monitored at different stages during growth and furthermore the crystal's face boundary can be determined with high precision throughout the whole growth process. Real-time in our case means recording one image sequence within 2 to 15 minutes depending on the quantity and quality of the images. © (2014) Trans Tech Publications, Switzerland.
APA:
Neubauer, G., Salamon, M., Uhlmann, N., & Wellmann, P. (2014). Real-time measurement of the evolution of growth facets during SiC PVT bulk growth using 3-D X-ray computed tomography. Materials Science Forum, 778-780, 9-12. https://doi.org/10.4028/www.scientific.net/MSF.778-780.9
MLA:
Neubauer, Georg, et al. "Real-time measurement of the evolution of growth facets during SiC PVT bulk growth using 3-D X-ray computed tomography." Materials Science Forum 778-780 (2014): 9-12.
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