Cojocari O, Biber S, Mottet B, Rodriguez-Girones M, Hartnagel H, Schmidt LP (2005)
Publication Language: English
Publication Type: Journal article
Publication year: 2005
Publisher: Institute of Physics: Hybrid Open Access
Book Volume: 20
Journal Issue: S. 23-32
DOI: 10.1088/0268-1242/20/1/004
This paper presents results which originated from a long-term systematic optimization of surface processing prior to anode formation of THz Schottky-based components. Particularly, four most promising surface-processing approaches are carefully investigated separately and in combination in order to understand the chemical and physical processes occurring on a GaAs surface. A reliable technological approach for anode formation is identified, which exhibits optimal diode characteristics and production repeatability. A model is proposed for the influence of each process on the subsequent one in the fabrication process sequence. DC- and IF-noise measurements are performed using an automated measurement system providing statistically significant data. Very good de-parameters such as a series resistance of R
APA:
Cojocari, O., Biber, S., Mottet, B., Rodriguez-Girones, M., Hartnagel, H., & Schmidt, L.-P. (2005). DC- and IF-noise performance optimization of GaAs Schottky diodes for THz applications. Semiconductor Science and Technology, 20(S. 23-32). https://doi.org/10.1088/0268-1242/20/1/004
MLA:
Cojocari, O., et al. "DC- and IF-noise performance optimization of GaAs Schottky diodes for THz applications." Semiconductor Science and Technology 20.S. 23-32 (2005).
BibTeX: Download