Electronic structure of HgSe(001) investigated by direct and inverse photoemission
Fink R, Umbach E, Landwehr G (2000)
Publication Type: Journal article
Publication year: 2000
Journal
Publisher: American Physical Society
Book Volume: 61
Pages Range: 12666-12669
URI: http://prola.aps.org/pdf/PRB/v61/i19/p12666_1
Abstract
Stimulated by recent photoemission results which suggest a positive fundamental energy gap in HgSe, we have investigated the electronic structure of molecular beam epitaxially grown HgSe(001) c(2X2) layers by a combination of direct ultraviolet photoemission spectroscopy (UPS) and inverse (IPES) photoelectron spectroscopy. Our UPS results do not support the finding of additional peaks above the valence band maximum (VBM) of Gawlik et al. [Phys. Rev. Lett. 78, 3165 (1997)]. A comparison of angle-integrated UPS and IPES spectra and ab initia calculated density of states of HgSe and HgTe demonstrates dissimilar behavior of the two compounds in the dispersion of the conduction bands between 0 and 2 eV above the VBM. Our results are compatible with the common view that HgSe is a semimetal. ©2000 The American Physical Society.
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APA:
Fink, R., Umbach, E., & Landwehr, G. (2000). Electronic structure of HgSe(001) investigated by direct and inverse photoemission. Physical Review B, 61, 12666-12669.
MLA:
Fink, Rainer, Eberhard Umbach, and G. Landwehr. "Electronic structure of HgSe(001) investigated by direct and inverse photoemission." Physical Review B 61 (2000): 12666-12669.
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