Malzer S (2005)
Publication Type: Conference contribution, Conference Contribution
Publication year: 2005
Original Authors: Kramer S., Neumann S., Prost W., Tegude F.J., Malzer S., Dohler G.H.
Publisher: American Institute of Physics
Book Volume: 772
Pages Range: 119-120
Event location: Flagstaff, AZ
DOI: 10.1063/1.1994022
We report on observation of a piezo-electric field in InGaAsP-QWs embedded in InP induced by the spontaneous ordering of the MOCVD-grown InGaAsP-layer. The structure was embedded in the intrinsic layer of a p-i-n diode allowing for the internal field determination by the quantum confined Stark effect in photocurrent spectroscopy. The sign and magnitude of this piezo field was determined to 80±2 kV/cm for an In Ga As P /InP layer system. © 2005 American Institute of Physics.
APA:
Malzer, S. (2005). Determination of piezo-electric fields in spontaneously ordered InGaAsP. In Proceedings of the PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 119-120). Flagstaff, AZ: American Institute of Physics.
MLA:
Malzer, Stefan. "Determination of piezo-electric fields in spontaneously ordered InGaAsP." Proceedings of the PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ American Institute of Physics, 2005. 119-120.
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