Malzer S (2005)
Publication Type: Conference contribution, Conference Contribution
Publication year: 2005
Original Authors: Malzer S., Steen C., Kiesel P., Dohler G.H.
Publisher: American Institute of Physics
Book Volume: 772
Pages Range: 149-150
Event location: Flagstaff, AZ
DOI: 10.1063/1.1994037
We report on optical cross sections of electrons and holes in thin layers of LT-GaAs embedded in hetero-pin-diodes. With an appropriate design, the time dependent change of the n-layer conductance directly reflects the change in the charge state of the deep levels. The original completely filled (or empty) defect states can be created by an electrical bias or illumination by laser light. For samples annealed at 700 °C we find a defect signature very similar to the EL2 defect in the literature. © 2005 American Institute of Physics.
APA:
Malzer, S. (2005). Determination of optical cross sections for electron and hole emission from deep defects in low-temperature-grown GaAs. In Proceedings of the PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 149-150). Flagstaff, AZ: American Institute of Physics.
MLA:
Malzer, Stefan. "Determination of optical cross sections for electron and hole emission from deep defects in low-temperature-grown GaAs." Proceedings of the PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ American Institute of Physics, 2005. 149-150.
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