Grivickas V, Gulbinas K, Jokubavicius V, Sun J, Karaliūnas M, Kamiyama S, Linnarsson MK, Kaiser M, Wellmann P, Syväjärvi M (2014)
Publication Language: English
Publication Status: Published
Publication Type: Journal article
Publication year: 2014
Publisher: Institute of Physics: Open Access Journals / IOP Publishing
Book Volume: 56
Article Number: 012004
DOI: 10.1088/1757-899X/56/1/012004
The thick N-B co-doped epilayers were grown by the fast sublimation growth method and the depth-resolved carrier lifetimes have been investigated by means of the free-carrier absorption (FCA) decay under perpendicular probe-pump measurement geometry. In some samples, we optically reveal in-grown carbon inclusions and polycrystalline defects of substantial concentration and show that these defects slow down excess carrier lifetime and prevent donor-acceptor pair photoluminescence (DAP PL). A pronounced electron lifetime reduction when injection level approaches the doping level was observed. It is caused by diffusion driven non-radiative recombination. However, the influence of surface recombination is small and insignificant at 300 K.
APA:
Grivickas, V., Gulbinas, K., Jokubavicius, V., Sun, J., Karaliūnas, M., Kamiyama, S.,... Syväjärvi, M. (2014). Carrier Lifetimes and Influence of In-Grown Defects in N-B Co-Doped 6H-SiC. IOP Conference Series: Materials Science and Engineering, 56. https://doi.org/10.1088/1757-899X/56/1/012004
MLA:
Grivickas, Vytautas, et al. "Carrier Lifetimes and Influence of In-Grown Defects in N-B Co-Doped 6H-SiC." IOP Conference Series: Materials Science and Engineering 56 (2014).
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