Rankl D, Jokubavicius V, Syväjärvi M, Wellmann P (2015)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2015
Publisher: Trans Tech Publications
City/Town: Switzerland
Book Volume: 821-823
Pages Range: 77-80
Conference Proceedings Title: Materials Science Forum (Volumes 821-823)
ISBN: 9783038354789
DOI: 10.4028/www.scientific.net/MSF.821-823.77
We have investigated the crystal growth of 3C-SiC using physical vapor transport growth in the temperature range from 1800°C to 1950°C. The supersaturation was determined using numerical modeling of the temperature field and gas phase composition by applying quasiequilibrium thermodynamic conditions. Analysis of the 3C-SiC yield was carried out by optical microscopy, optical absorption, Raman spectroscopy and x-ray analysis. Quantitative data on supersaturation are compared with most stable 3C-SiC nucleation and growth condition. Our interest is in particular to understand how to use sublimation epitaxy experience in 3C-SiC growth to a PVT set up that could open up the possibility of large area bulk growth. As indicative measure, the application to large area growth in a physical vapor transport growth reactor is briefly addressed.
APA:
Rankl, D., Jokubavicius, V., Syväjärvi, M., & Wellmann, P. (2015). Quantitative study on the role of supersaturation during sublimation growth on the yield of 50 mm diameter 3C-SiC. Materials Science Forum, 821-823, 77-80. https://doi.org/10.4028/www.scientific.net/MSF.821-823.77
MLA:
Rankl, Dominik, et al. "Quantitative study on the role of supersaturation during sublimation growth on the yield of 50 mm diameter 3C-SiC." Materials Science Forum 821-823 (2015): 77-80.
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