Pohl T, Hammerl C, Rauschenbach B, Rüde U (2001)
Publication Type: Journal article
Publication year: 2001
Publisher: Elsevier
Book Volume: 178
Pages Range: 135-137
DOI: 10.1016/S0168-583X(01)00511-0
Ion beam synthesis of buried layers can be realized by a two-stage process of ion implantation and a post-implantation thermal treatment. During ion implantation precipitates are formed after exceeding the solid solution state and grow with increasing fluence. Thermal treatments can stimulate an onward growth of the implantation-induced precipitates up to the state of coalescence, where closed buried layers can be formed. In order to investigate such Ostwald ripening processes, computer simulations based on a newly developed model were carried out. The model consists of both the diffusion behaviour and the precipitate evolution. Within one simulation time step the numerical calculation of diffusion and precipitate changes is alternately performed until a stationary numerical solution is achieved. The simulation of the diffusion part of the ripening process is realized by a multigrid algorithm, which leads to near real time calculations. The obtained simulation results are compared to the predictions of the theory of Lifshitz, Slyozov and Wagner (LSW) and the advanced model of Voorhees and Glicksman. © 2001 Published by Elsevier Science B.V.
APA:
Pohl, T., Hammerl, C., Rauschenbach, B., & Rüde, U. (2001). Computer simulation of Ostwald ripening for ion beam synthesis of buried layers. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 178, 135-137. https://doi.org/10.1016/S0168-583X(01)00511-0
MLA:
Pohl, Thomas, et al. "Computer simulation of Ostwald ripening for ion beam synthesis of buried layers." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 178 (2001): 135-137.
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