Rimmelspacher J, Weigel R, Hagelauer AM, Issakov V (2017)
Publication Language: English
Publication Status: Accepted
Publication Type: Conference contribution, Original article
Future Publication Type: Conference contribution
Publication year: 2017
Pages Range: 1356-1358
Conference Proceedings Title: IEEE MTT-S International Microwave Symposium 2017
DOI: 10.1109/MWSYM.2017.8058865
This paper presents a millimeter-wave (mm-wave) push-push voltage-controlled oscillator (VCO) in a 45 nm RFSOI CMOS technology. The circuit aims to meet specifications for FMCW radar applications requiring an ultra-wide PLL modulation bandwidth. The fundamental output of the VCO can be tuned from 27 GHz to 39 GHz, which corresponds to frequency tuning range (FTR) of 36 %. We extract the 2nd harmonic in a non-invasive way using a transformer. The measured phase noise (PN) at 1 MHz offset from the fundamental carrier varies across the tuning range from -100 dBc/Hz to -90 dBc/Hz. The VCO including output buffers dissipates 65 mW DC power from a single 1 V supply and consumes a chip area of 0.12 mm2.
APA:
Rimmelspacher, J., Weigel, R., Hagelauer, A.M., & Issakov, V. (2017). 36 % Frequency-Tuning-Range Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology. In IEEE MTT-S International Microwave Symposium 2017 (pp. 1356-1358). Honolulu, HI, US.
MLA:
Rimmelspacher, Johannes, et al. "36 % Frequency-Tuning-Range Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology." Proceedings of the International Microwave Symposium 2017, Honolulu, HI 2017. 1356-1358.
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