Cojocari O, Mottet B, Rodriguez-Girones M, Biber S, Marchand L, Schmidt LP, Hartnagel H (2004)
Publication Language: English
Publication Type: Journal article
Publication year: 2004
Publisher: Institute of Physics: Hybrid Open Access
Book Volume: 19
Pages Range: 537-542
Journal Issue: 3
DOI: 10.1088/0268-1242/19/3/045
This paper presents the evaluation of a Schottky contact technology based on electrochemical metal deposition. The results of a long-term systematic investigation and optimization of the anode formation process to improve the yield and performance of Schottky-based GaAs mixer diodes are detailed. Surface preparation prior to the Schottky-metal deposition and anode metallization as previously optimized for whisker-contacted diodes are successfully transferred to the fabrication of planar structures. This uses an auxiliary honeycomb array of anode-like structures called 'dummy anodes', which are processed simultaneously with the real anodes and then removed in the later technological processes. Consequently, the scattering of planar diodes electrical parameters is significantly reduced and the yield of the fabrication process increases from about 5% up to about 50%. Very good dc characteristics such as series resistance (R
APA:
Cojocari, O., Mottet, B., Rodriguez-Girones, M., Biber, S., Marchand, L., Schmidt, L.-P., & Hartnagel, H. (2004). A new Structural Approach for Uniform Sub-Micrometer Anode Metallization of Planar THz Schottky Components. Semiconductor Science and Technology, 19(3), 537-542. https://doi.org/10.1088/0268-1242/19/3/045
MLA:
Cojocari, O., et al. "A new Structural Approach for Uniform Sub-Micrometer Anode Metallization of Planar THz Schottky Components." Semiconductor Science and Technology 19.3 (2004): 537-542.
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