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Electrical Characterization of Zirconium Silicate Films Obtained from Novel MOCVD Precursors

Paskaleva A, Lemberger M, Zürcher S, Bauer A, Frey L, Ryssel H (2003)

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Publication Type: Conference contribution

Publication year: 2003

Journal

Publisher: IMEP

Edited Volumes: Microelectronics Reliability

City/Town: Grenoble, France

Book Volume: 43

Pages Range: 53-56

Conference Proceedings Title: Proceedings of the 12th Workshop on Dielectrics in Microelectronics (WoDiM 2002)

Event location: Grenoble, France

ISBN: 2-9514840-0-3

DOI: 10.1016/S0026-2714(03)00180-X

Abstract

In the present work, the potential of zirconium silicate (ZrSixOy) films as an alternative gate dielectric to SiO2 for future technology generations is demonstrated. Novel single-source precursors for MOCVD of zirconium silicate were synthesized and ZrSixOy layers were deposited. I-V and C-V measurement data are presented and detected charge trapping phenomena are discussed. © 2003 Elsevier Ltd. All Rights Reserved.

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How to cite

APA:

Paskaleva, A., Lemberger, M., Zürcher, S., Bauer, A., Frey, L., & Ryssel, H. (2003). Electrical Characterization of Zirconium Silicate Films Obtained from Novel MOCVD Precursors. In Proceedings of the 12th Workshop on Dielectrics in Microelectronics (WoDiM 2002) (pp. 53-56). Grenoble, France: Grenoble, France: IMEP.

MLA:

Paskaleva, Albena, et al. "Electrical Characterization of Zirconium Silicate Films Obtained from Novel MOCVD Precursors." Proceedings of the WoDiM 2002, Grenoble, France Grenoble, France: IMEP, 2003. 53-56.

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