Annealing of Aluminium Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing

Rambach M, Bauer A, Frey L, Friedrichs P, Ryssel H (2005)

Publication Language: English

Publication Type: Journal article

Publication year: 2005

Journal

Materials Science Forum Trans Tech Publications

Book Volume: 483-485

Pages Range: 483

Journal Issue: 621

ISBN: 0878499636

Abstract

Furnace annealing and lamp annealing of aluminum implanted layers in 4H silicon carbide (SiC) were investigated with respect to surface degradation and electrical parameters. A sheet resistance of about 20kΩ/□ was obtained for an aluminum implantation dose of 1.2·10¹⁵cm^-2 and annealing in the furnace at 1700°C for 30min. For the same implantation dose, lamp annealing at 1770°C for 5min resulted in a three times higher sheet resistance of 60kΩ/□. The surface roughness was best for the lamp system and stayed below 1nm for Al doses lower than 1·10 ¹⁵ cm^-2.

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente

How to cite

APA:

Rambach, M., Bauer, A., Frey, L., Friedrichs, P., & Ryssel, H. (2005). Annealing of Aluminium Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing. Materials Science Forum, 483-485(621), 483.

MLA:

Rambach, Martin, et al. "Annealing of Aluminium Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing." Materials Science Forum 483-485.621 (2005): 483.

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