Martinez Limia A, Pichler P, Steen C, Paul S, Lerch W (2008)
Publication Type: Conference contribution
Publication year: 2008
Publisher: Trans Tech Publications Ltd
Edited Volumes: Solid State Phenomena
Series: Solid-State Phenomena
Book Volume: 131 - 133
Pages Range: 277
Conference Proceedings Title: Gettering and Defect Engineering in Semiconductor Technology XII
Event location: Italien
ISBN: 3-908451-43-4
DOI: 10.4028/www.scientific.net/SSP.131-133.277
APA:
Martinez Limia, A., Pichler, P., Steen, C., Paul, S., & Lerch, W. (2008). Modeling of the Diffusion and Activation of Arsenic in Silicon Including Clustering and Precipitation. In Gettering and Defect Engineering in Semiconductor Technology XII (pp. 277). Italien: Trans Tech Publications Ltd.
MLA:
Martinez Limia, Alberto, et al. "Modeling of the Diffusion and Activation of Arsenic in Silicon Including Clustering and Precipitation." Proceedings of the Gettering and Defect Engineering in Semiconductor Technology XII, Italien Trans Tech Publications Ltd, 2008. 277.
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